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| FDFS2P753AZ Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode April 2008 FDFS2P753AZ Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115m Features Max rDS(on) = 115m at VGS = -10V, ID = -3.0A Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5A VF < 0.45V @ 2A VF < 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility RoHS Compliant (R) tm General Description The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchild's PowerTrench MOSFET with a Schottky diode in an SO-8 package. The MOSFET features a low on-state resistance and an optimized gate charge to achieve fast switching. The independently connected Schottky diode has a low forward voltage drop to minimize power loss. This device is an Ideal DC-DC solution for up to 3A peak load current. Applications DC - DC Conversion D D C C D G S A A Pin 1 SO-8 C C 6 7 8 3 2 1 D 5 4 G S A A MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed PD EAS VRRM IO TJ, TSTG Power Dissipation Power Dissipation Single Pulse Avalanche Energy Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Operating and Storage Junction Temperature Range TC = 25C TA = 25C (Note 1a) (Note 2) (Note 1a) Ratings -30 25 -3 -16 3.1 1.6 6 30 2 -55 to +150 Units V V A W mJ V A C Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 40 78 C/W Package Marking and Ordering Information Device Marking FDFS2P753AZ Device FDFS2P753AZ Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500units (c)2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 1 www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -24V, VGS = 0V TJ = 125C VGS = 25V, VDS = 0V -30 -21 -1 -100 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -3.0A VGS = -4.5V, ID = -1.5A VGS = -10V, ID = -3.0A, TJ = 125C VDD = -5V, ID = -3.0A -1.0 -2.1 5 69 115 97 6 115 180 162 S m -3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz 330 60 55 18 455 110 100 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to -10V VGS = 0V to -4.5V VDD = -15V, ID = -3.0A VDD = -15V, ID = -3.0A, VGS = -10V, RGEN = 6 6 4 19 15 7.9 4.1 1.3 2.0 12 10 34 27 11.0 5.7 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -2.0A IF = -3.0A, di/dt = 100A/s (Note 3) -0.9 20 14 -1.2 30 21 V ns nC Schottky Diode Characteristics VR IR Reverse Breakdown Voltage Reverse Leakage IR = 1mA VR = 10V IF = 100mA VF Forward Voltage IF = 2A TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C 30 39 18 225 140 364 290 450 280 mV 250 V A mA (c)2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 2 www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode NOTES: 1.RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78C/W when mounted on a 0.5 in2 pad of 2 oz copper. b. 135C/W when mounted on a minimum pad of 2 oz copper. 2. Starting TJ = 25C, L = 3 mH, IAS = -2A, VDD = -27V, VGS = -10V. 3. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. (c)2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 3 www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 16 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -10V -ID, DRAIN CURRENT (A) VGS = -5V 3.0 2.5 2.0 1.5 VGS = -4.5XV VGS = -5V VGS = -3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -4V 12 VGS = -4.5V 8 VGS = - 4V VGS = -3.5V 4 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1.0 VGS = -10V 0 0 0.5 0 4 8 12 16 -ID, DRAIN CURRENT(A) 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 400 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = -3A VGS = -10V 350 300 250 200 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1.4 1.2 1.0 0.8 0.6 -75 rDS(on), DRAIN TO ID = -1.5A TJ = 150oC 150 100 50 TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 16 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 20 10 VGS = 0V -ID, DRAIN CURRENT (A) 12 VDD = -5V 1 TJ = 150oC TJ = 25oC 8 TJ = 25oC 0.1 4 TJ = 150oC TJ = -55oC 0.01 TJ = -55oC 0 0 1 2 3 4 5 6 0.001 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 4 www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 10 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -3A 1000 Ciss VDD = -10V VDD = -20V CAPACITANCE (pF) 8 6 VDD = -15V 4 2 0 0 2 4 6 8 10 Qg, GATE CHARGE(nC) Coss 100 f = 1MHz VGS = 0V Crss 30 0.1 1 10 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 -Ig, GATE LEAKAGE CURRENT(A) -4 5 -IAS, AVALANCHE CURRENT(A) 4 3 TJ = 25oC 10 -5 10 -6 TJ = 125oC 2 TJ = 125oC 10 -7 TJ = 25oC 1 0.01 10 -8 0.1 tAV, TIME IN AVALANCHE(ms) 1 2 0 5 10 15 20 25 30 -VGS, GATE TO SOURCE VOLTAGE(V) Figure 9. Unclamped Inductive Switching Capability 3.0 -ID, DRAIN CURRENT (A) Figure 10. Gate Leakage Current vs Gate to Source Volatge 20 10 VGS = -10V 2.0 1.5 1.0 0.5 RJA = 78 C/W o -ID, DRAIN CURRENT (A) 2.5 1ms 1 THIS AREA IS LIMITED BY rDS(on) 10ms 100ms 1s 10s DC VGS = -4.5V 0.1 SINGLE PULSE TJ = MAX RATED RJA = 135oC/W TA = 25oC 0.0 25 50 75 100 125 o 150 0.01 0.1 1 10 80 TA, AMBIENT TEMPERATURE ( C) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area (c)2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 5 www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted IR, REVERSE LEAKAGE CURRENT (mA) 100 IF, FORWARD CURRENT(A) 100 TJ = 125oC 10 TJ = 125oC 10 1 0.1 0.01 0.001 0.0 1 TJ = 25oC 0.1 TJ = 25oC 0.01 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE(V) Figure 13. Schottky Diode Forward Voltage 50 P(PK), PEAK TRANSIENT POWER (W) Figure 14. Schottky Diode Reverse Current VGS = -10V 10 SINGLE PULSE RJA = 135 C/W TA = 25 C o o 1 0.5 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 15. Single Pulse Maximum Power Dissipation 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 SINGLE PULSE RJA = 135 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.01 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 16. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C 6 www.fairchildsemi.com FDFS2P753AZ Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2008 Fairchild Semiconductor Corporation FDFS2P753AZ Rev.C www.fairchildsemi.com |
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